Characterization of transistor matching in silicongermanium. Lianghung lu, jaesung rieh, pallab bhattacharya and linda p. Bf494a datasheetpdf 1 page continental device india limited. Results show reduced boron diffusion into the pnp sige base region, in qualitative agreement with 256. Operational manual, epsilon 2000 single wafer epitaxial reactor, asm. Continental device india limitedan isiso 9002 and iecq certified manufacturernpn silicon planar epitaxial rf transistorsbf494bf495to92plastic packagehigh voltage video transistorsabsolute maximum ratingsta25. The sige bipolar transistor includes a collector region of a first conductivity type. A vertical sige epitaxial growth system for massproduction of sige devices is described. The hydrogen anneal fga at the end of the processing is shown to reduce the lowfrequency noise. For the cvdprocess considered here 1, this includes the gas flows, pressure, temperatures and deposition time. The ones marked may be different from the article in the profile.
After demonstrating the stability and highvolume production capability of sige strainedlayer epitaxy for hbt base deposition using ultrahigh vacuum cvd uhv cvd 8 and lowpressure cvd lp cvd. Another way to speed the base transit time of this type of transistor is to vary the band gap across the base, e. Key technology features include a dielectricfilled deep and shallow trench isolation, a polysiliconemitter sigeepitaxialbase npn, a lowthermalcycle 0. Cn101589460a mobility enhancement in sige heterojunction. Integration of highly strained sige in source and drain with. These results are very important for the reduction of base current in scaled homojunction and sisigesi heterojunction bipolar transistors. Investigation of deep traps in silicongermanium epitaxial. Read investigation of deep traps in silicongermanium epitaxial base bipolar transistors with a single polysilicon quasi selfaligned architecture, microelectronics reliability on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at. Sige quantum dot singlehole transistor fabricated by. In this paper, we report on the use of poly sige as the extrinsic base layer used in order to produce a selfaligned process utilizing nonselective epitaxy of sige. Tack alcatel microelectronics, westerring 15, b9700 oudenaarde, belgium jan.
Base emittervoltage basisemitterspannung 2 v ce 5 v. Advances in silicon germanium sige heterojunction bipolar transistor hbt technologies resulted in an impressive increase in highfrequency performance during the last decade extending the addressed application frequencies into the mm and submmwave bands. Sturmb princeton institute for the science and technology of materials prism, department of electrical. C unless specified otherwisedescription datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other. Silicongermanium heterojunction bipolar transistors for mmwave. The aim of this work is to fabricate sige hbts using ge implantation within a. Lateral base design rules for optimized lowfrequency. Data sheet npn silicon rf transistor 2sc3355 npn epitaxial silicon rf transistor for highfrequency lownoise amplification description the 2sc3355 is an npn silicon epitaxial transistor designed for low noise amplifier at vhf, uhf and catv band. Aug 01, 2000 read rts noise in submicron sige epitaxial base bipolar transistors, microelectronics reliability on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. Tip122 datasheet12 pages diotec siepitaxial planar. The method comprises the step of forming an epitaxial layer 28 to form a channel region of a mos transistor and a base region of a bipolar transistor.
In this process sige material replaces the silicon of the base of a bipolar transistor. Us20070298561a1 integrated sige nmos and pmos transistors. Base doping effects and design of sisigesi heterojunction. A method of fabricating an integrated bicmos circuit is provided, the circuit including bipolar transistors 10 and cmos transistors 12 on a substrate. C for intrinsic base and poly sige for extrinsic base. The base region is regrown from an epitaxial sige, ge or iiiv semiconductor material. Sige quantum dot singlehole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial regrowth xiangzheng bo, l.
A sige bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. Epitaxial growth of si1xygexcy layers for base layer applications in bipolar transistors. Carbon incorporation for strain compensation during solid. A selective epitaxial growth sige base hbt with smi electrodes featuring 9. Silicon npn transistors stmicroelectronics preferred salestypes npn transistor description the 2n3439 and 2n3440 are silicon epitaxial planar npn transistors in jedec to39 metal case designed for use in consumer and industrial lineoperated applications. Kband sisige hbt mmic amplifiers using lumped pas sive. Us7173274b2 incorporation of carbon in siliconsilicon. Favored process options for hbts with selective epitaxial growth seg and with nonselective epitaxial growth nseg of the sige base layer are analyzed in detail. It is proved by theory 2 that the upper limit of the product ft. Request pdf on researchgate sisige epitaxialbase transistorspart i. Sige heterojunction bipolar transistors springerlink. In recent years, with maturity of epitaxial deposition techniques, silicon germanium. Vbrceo 120v min high current capability complement to type 2sb696 applications designed for af power amplifier applications.
This paper investigates highcurrent and electrostatic discharge esd phenomena in pseudomorphic epitaxialbase silicongermanium sige heterojunction bipolar transistors hbts in basecollector, baseemitter, collectoremitter and collectortosubstrate configurations. Tip122 datasheet22 pages diotec siepitaxial planar. Advances in silicongermanium sige heterojunction bipolar transistor. Use of oxynitride dielectric to maximise the growth rate of. The ntype transistors were fabricated using a standard mos process. Sige virtual substrate hmos transistor for analogue applications. The process features six layers of metalization and.
The sige containing layer further has an average germanium content of not less than about 80% of the predetermined critical germanium content the present invention also relates to a method for enhancing carrier mobility in a hbt having a sige containing base layer, by uniformly increasing germanium content in the base layer so that the average. Rts noise in submicron sige epitaxial base bipolar transistors. In this study, the integration of sige selective epitaxy on sourcedrain regions and highk and metal gate for. Growing of the epitaxial layer includes growing a first sublayer of silicon 28 a, a first. Because dislocations will pile by the side of pattern and seriously deteriorate the device performance, the sige nonselective epitaxial is the most. A selfaligned double polysi process utilizing nonselective. Simulation of sige epitaxial growth for rfbipolar transistors. Electrostatic discharge characterization of epitaxialbase. High frequency characterization and modeling of sige heterojunction bipolar transistors xi paper vii.
For the epitaxial base transistors, where the base boron profiles are sharp, a linear characteristic is obtained from which the bandgap narrowing in the base can be calculated. Sigec heterojunction bipolar transistors diva portal. Gribnikov institute of semiconductor physics ukrainian academy of sciences kiev28, ukraine s. Electrostatic discharge and high current pulse characterization of epitaxialbase silicongermanium heterojunction bipolar transistors conference paper pdf available february 2000 with 192 reads. A sige base bipolar transistor is a very attractive candidate to achieve a. Use of oxynitride dielectric to maximise the growth rate of selective epitaxial base layer in a selfaligned doublepolysilicon sige bipolar transistors j.
The sige bicmos technology under investigation is the commerciallyavailable national bicmos8 sige hbt process technology. We analyse the multilevel fluctuations of base and emitter forward currents before and after reverse stress on the. Siliconon nothing process enabled by sacrificial sige epitaxial layer. Heavy c ptype doping of gaasp via mocvd, necessary for the hbt base region, was studied.
Characterisation of npn and pnp sige heterojunction. Use of oxynitride dielectric to maximise the growth rate. Sige heterojunction bipolar transistors peter ashburn sige hbts is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Us6720637b2 sige transistor, varactor and pin velocity. Characterisation of npn and pnp sige heterojunction bipolar transistors formed by ge implantation m mitchell, s nigrins, f cristiano. Influence of doping on the thermal stability of sisigesi heterostructures. The modular concept used for the extrinsic base can also be applied to a conventional doublepoly bipolar process flow that uses an implanted base.
Pdf electrostatic discharge and high current pulse. Sige heterojunction bipolar transistors peter ashburn. Inchange semiconductor isc product specification isc silicon npn power transistor 2sd732 description collectoremitter breakdown voltage. Us9209095b2 iiiv, ge, or sige fin base lateral bipolar. Advanced epitaxial growth of strained sige on a silicon germanium substrate enhances the freedom for designing high speed bipolar transistors. Device design issues for a highperformance bipolar. These results were confirmed by iv measurements performed at different temperatures. General purpose npn pnp epitaxial planar transistors. Fins are patterned in the wafer using the fin hardmasks exposed within the trench, wherein the fins will serve as a base region of the bipolar transistor device. International electron devices meeting, washington, dc, december 10, 1995. Characterization of transistor matching in silicon.
B647 datasheet, equivalent, cross reference search. Katehi department of electrical engineering and computer science university of michigan, ann arbor, mi 481092122 e. Boron was found to passivate interfacial traps, acting as. Npn silicon planar epitaxial transistor this npn silicon epitaxial transistor is designed for use in industrial and consumer applications. An epitaxial base bipolar technology has been used for fabrication of graded sigebased hbts heterojunction bipolar transistors or sibase pseudohbts with a selfaligned insitu doped ntype. It is seen that increasing the uce the transient frequency decreases. Reduction of the device parasitics is re quired, however, to exploit the high fr for circuit applications.
This cited by count includes citations to the following articles in scholar. Silicon bipolar transistor and b silicongermanium hbt compared to a silicon bipolar transistor. Gaaspingap heterojunction bipolar transistors for iiiv on. Smd type transistors npn transistors 2sc3338 sot89 unit. Silicongermanium heterojunction bipolar transistors by. I 3 ai 60 ma c b maximum ratings ta 25c characteristic symbol rating unit collectorbase voltage vcbo 15 v. Sige hbts and ics for opticalfiber communication systems. Pdf a high performance epitaxial sigebase ecl bicmos. The recent introduction of epitaxial sigebase heterojunction bipolar transistors 9,10, in particular, has opened exciting possibilities for the realization of highperformance cryogenic bicmos technologies, and has in fact produced the first sibased bipolar circuits which are. The sige hbt utilizes deep trench isolation, a selfaligned emitter base structure, insitu doped polysilicon emitter, and a nonselective sige epitaxial base process.
The investigated sige base transistors were fabricated using a bicmos singlepolysilicon quasi selfaligned process, where base implant had been replaced by selective epitaxy on the base active area. C epitaxial layer with a very small surface roughness root mean square about 0. Buceo is constant, depending on the semiconductor material. On the theoretical point of view, numerical method for analysing. Rootcause analysis and statistical process control of. High frequency characterization and modeling of sige. Vertical profile engineering and reliability study of silicon. The focus is on the work performed in the dotseven project concerning the development of the highperformance sige bicmos technology platform b11hfc at in. These technologies became a key enabler for demanding mmwave. Parameter symbol rating unit collector base voltage vcbo 20 collector emitter. Leakage current mechanisms in sige hbts fabricated. To complete the transistor the sio2 and si3n4 are removed from sourcedrain regions and. Highperformance sige hbts for next generation bicmos technology.